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MO31DR QPF7N65C 1SV30807 1SV30807 18000 CMD6D11B 1ZSFXX DDZ5V1BS
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  Datasheet File OCR Text:
 Transistors
Power Transistor (*80V, *1A)
2SB1260 / 2SB1181 / 2SB1241
FFeatures 1) High breakdown voltage and high current. VCEO = *80V, IC = *1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm)
(96-123-B54)
219
Transistors
FAbsolute maximum ratings (Ta = 25_C)
2SB1260 / 2SB1181 / 2SB1241
FElectrical characteristics (Ta = 25_C)
FPackaging specifications and hFE
hFE values are classified as follows :
220
Transistors
FElectrical characteristic curves
2SB1260 / 2SB1181 / 2SB1241
221
Transistors
2SB1260/2SB1181/2SB1241
222


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